元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
SUP53P06-20-E3 | Vishay Siliconix | MOSFET P-CH 60V 9.2A TO220AB | 0 | 1:$2.41000 25:$1.94240 100:$1.74830 250:$1.55400 500:$1.35976 1,000:$1.12665 2,500:$1.04895 5,000:$1.01010 10,000:$0.97125 |
SI9424BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 5.6A 8SOIC | 0 | 2,500:$0.32915 |
IRFR9010TRLPBF | Vishay Siliconix | MOSFET P-CH 50V 5.3A DPAK | 0 | 3,000:$0.32915 |
SIE860DF-T1-E3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 3,000:$1.12725 |
SUP90N04-3M3P-GE3 | Vishay Siliconix | MOSFET N-CH 40V TO-220AB | 0 | 1:$2.31000 25:$1.86240 100:$1.67630 250:$1.49000 500:$1.30376 1,000:$1.08025 2,500:$1.00575 5,000:$0.96850 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET P 通道,金屬氧化物 |
FET 特點(diǎn): | 邏輯電平門(mén) |
漏極至源極電壓(Vdss): | 60V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 9.2A |
開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 19.5 毫歐 @ 30A,10V |
Id 時(shí)的 Vgs(th)(最大): | 3V @ 250µA |
閘電荷(Qg) @ Vgs: | 115nC @ 10V |
輸入電容 (Ciss) @ Vds: | 3500pF @ 25V |
功率 - 最大: | 3.1W |
安裝類型: | 通孔 |
封裝/外殼: | TO-220-3 |
供應(yīng)商設(shè)備封裝: | TO-220AB |
包裝: | 管件 |