| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI7356ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$1.39650 |
| SIHB15N60E-GE3 | Vishay Siliconix | MOSFET N CH 600V 15A DPAK | 0 | 1:$3.14000 25:$2.52000 100:$2.29600 250:$2.07200 500:$1.85920 1,000:$1.56800 2,500:$1.48960 5,000:$1.42800 |
| SUP90N15-18P-E3 | Vishay Siliconix | MOSFET N-CH D-S 150V TO220AB | 0 | 500:$3.10420 |
| SIHP25N40D-GE3 | Vishay Siliconix | MOSFET N-CH 400V 25A TO-220AB | 0 | 1:$3.08000 25:$2.47520 100:$2.25500 250:$2.03500 500:$1.82600 1,000:$1.54000 2,500:$1.46300 5,000:$1.40250 |
| SUP40N25-60-E3 | Vishay Siliconix | MOSFET N-CH D-S 250V TO220AB | 0 | 500:$3.00460 |
| SIHP15N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 15A TO220AB | 30 | 1:$2.97000 25:$2.38520 100:$2.17300 250:$1.96100 500:$1.75960 1,000:$1.48400 2,500:$1.40980 5,000:$1.35150 |
| SIHP14N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 14A TO-200AB | 50 | 1:$2.95000 25:$2.37520 100:$2.13750 250:$1.90000 500:$1.66250 1,000:$1.37750 2,500:$1.28250 5,000:$1.23500 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 40A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 3 毫歐 @ 20A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 145nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 6215pF @ 15V |
| 功率 - 最大: | 83W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? SO-8 |
| 包裝: | 帶卷 (TR) |