| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SIHB24N65E-GE3 | Vishay Siliconix | MOSFET N-CH 650V 24A D2PAK | 1,000 | 1:$5.96000 25:$4.79240 100:$4.36650 250:$3.94052 500:$3.53580 1,000:$2.98200 2,500:$2.83290 5,000:$2.71575 |
| SQM85N10-10-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V TO263 | 0 | 800:$5.83538 |
| SIHP24N65E-E3 | Vishay Siliconix | MOSFET N-CH 650V 24A TO220AB | 41 | 1:$5.74000 25:$4.61240 100:$4.20250 250:$3.79252 500:$3.40300 1,000:$2.87000 2,500:$2.72650 5,000:$2.61375 |
| SIHB22N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 21A D2PAK | 13 | 1:$4.20000 25:$3.37520 100:$3.07500 250:$2.77500 500:$2.49000 1,000:$2.10000 2,500:$1.99500 5,000:$1.91250 |
| SIHP22N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 21A TO220AB | 23 | 1:$4.06000 25:$3.26240 100:$2.97250 250:$2.68252 500:$2.40700 1,000:$2.03000 2,500:$1.92850 5,000:$1.84875 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 650V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 24A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 145 毫歐 @ 12A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 122nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2740pF @ 100V |
| 功率 - 最大: | 250W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D²PAK |
| 包裝: | 管件 |