| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| IXTX110N20L2 | IXYS | MOSFET N-CH 200V 110A PLUS247 | 0 | 30:$21.67500 |
| IXFH12N120P | IXYS | MOSFET N-CH 1200V 12A TO-247 | 0 | 60:$9.84200 |
| IXTK200N10L2 | IXYS | MOSFET 100V 200A TO-264 | 100 | 1:$25.70000 25:$21.84520 100:$20.23880 250:$18.63252 500:$17.66876 1,000:$16.70500 2,500:$16.19100 5,000:$15.74125 |
| IXTX24N100 | IXYS | MOSFET N-CH 1000V 24A PLUS247 | 0 | 30:$17.03400 |
| IXTC130N15T | IXYS | MOSFET N-CH 150V ISOPLUS220 | 0 | 100:$5.21700 |
| IXTC102N25T | IXYS | MOSFET N-CH 250V ISOPLUS220 | 0 | 100:$5.21700 |
| IXTA260N055T2-7 | IXYS | MOSFET N-CH 55V 260A TO-263 | 0 | 150:$3.58753 |
| IXTA230N075T2 | IXYS | MOSFET N-CH 75V 230A TO-263 | 0 | 150:$3.58753 |
| IXTQ50N25T | IXYS | MOSFET N-CH 250V 50A TO-3P | 0 | 120:$3.58750 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 110A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 24 毫歐 @ 55A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4.5V @ 3mA |
| 閘電荷(Qg) @ Vgs: | 500nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 23000pF @ 25V |
| 功率 - 最大: | 960W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-247-3 |
| 供應(yīng)商設(shè)備封裝: | PLUS247?-3 |
| 包裝: | 管件 |