分離式半導體產(chǎn)品 NVTR01P02LT1G品牌、價格、PDF參數(shù)
NVTR01P02LT1G 品牌、價格
元器件型號 |
廠商 |
描述 |
數(shù)量 |
價格 |
NVTR01P02LT1G |
ON Semiconductor |
MOSFET P-CH 20V 0.160R SOT23 |
0 |
6,000:$0.08500
|
NVTJD4001NT2G |
ON Semiconductor |
MOSFET N-CH SC88 30V 250MA SC-88 |
0 |
9,000:$0.08330
|
3LP01SS-TL-H |
ON Semiconductor |
MOSFET P-CH 30V 400MA SMCP |
0 |
8,000:$0.08109
|
3LP01C-TB-H |
ON Semiconductor |
MOSFET P-CH 30V 100MA CP |
0 |
9,000:$0.07866
|
3LN01SS-TL-H |
ON Semiconductor |
MOSFET N-CH 30V 150MA SMCP |
0 |
16,000:$0.07394
|
5LN01SS-TL-E |
ON Semiconductor |
MOSFET N-CH 50V 100MA SSFP |
0 |
8,000:$0.07326
|
NVTR01P02LT1G PDF參數(shù)
類別: |
分離式半導體產(chǎn)品
|
FET 型: |
MOSFET P 通道,金屬氧化物
|
FET 特點: |
邏輯電平門
|
漏極至源極電壓(Vdss): |
20V
|
電流 - 連續(xù)漏極(Id) @ 25° C: |
1.3A
|
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: |
220 毫歐 @ 750mA,4.5V
|
Id 時的 Vgs(th)(最大): |
1.25V @ 250µA
|
閘電荷(Qg) @ Vgs: |
5.5nC @ 4V
|
輸入電容 (Ciss) @ Vds: |
225pF @ 5V
|
功率 - 最大: |
400mW
|
安裝類型: |
表面貼裝
|
封裝/外殼: |
TO-236-3,SC-59,SOT-23-3
|
供應商設備封裝: |
SOT-23-3
|
包裝: |
帶卷 (TR)
|