| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| PBSS4160T,215 | NXP Semiconductors | TRANS NPN 60V 1A SOT23 | 6,000 | 3,000:$0.14800 6,000:$0.13800 15,000:$0.12900 30,000:$0.12200 75,000:$0.11900 150,000:$0.11500 |
| PBSS4160T,215 | NXP Semiconductors | TRANS NPN 60V 1A SOT23 | 8,459 | 1:$0.47000 10:$0.39300 25:$0.34480 100:$0.29510 250:$0.25596 500:$0.21678 1,000:$0.16713 |
| BC869,135 | NXP Semiconductors | TRANSISTOR PNP 20V 1A SOT89 | 0 | 4,000:$0.12900 |
| BC869,115 | NXP Semiconductors | TRANSISTOR PNP 20V 1A SOT89 | 4,000 | 1,000:$0.15500 2,000:$0.14100 5,000:$0.13200 10,000:$0.12300 25,000:$0.11600 50,000:$0.11400 100,000:$0.11200 |
| BC869,115 | NXP Semiconductors | TRANSISTOR PNP 20V 1A SOT89 | 4,318 | 1:$0.44000 10:$0.37500 25:$0.32800 100:$0.28090 250:$0.24360 500:$0.20634 |
| BC869,115 | NXP Semiconductors | TRANSISTOR PNP 20V 1A SOT89 | 4,318 | 1:$0.44000 10:$0.37500 25:$0.32800 100:$0.28090 250:$0.24360 500:$0.20634 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| 晶體管類型: | NPN |
| 電流 - 集電極 (Ic)（最大）: | 1A |
| 電壓 - 集電極發(fā)射極擊穿（最大）: | 60V |
| Ib、Ic條件下的Vce飽和度（最大）: | 250mV @ 100mA，1A |
| 電流 - 集電極截止（最大）: | 100nA |
| 在某 Ic、Vce 時的最小直流電流增益 (hFE): | 200 @ 500mA，5V |
| 功率 - 最大: | 400mW |
| 頻率 - 轉換: | 220MHz |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | TO-236AB |
| 包裝: | 帶卷 (TR) |