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參數(shù)資料
| 型號(hào)： | DSEP30-12CR |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) |
| 中文描述： | 30 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | ISOPLUS247, 2 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 19K |
| 代理商： | DSEP30-12CR |
2000 IXYS All rights reserved
1 - 1
HiPerDynFRED
TM
with soft recovery
(Electrically Isolated Back Surface)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300 μs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
A = Anode, C = Cathode
* Patent pending
ISOPLUS 247
TM
A
C
Isolated back surface *
C
A
Advanced Technical Information
Features
G
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
G
Low cathode to tab capacitance (<25pF)
G
International standard package
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
G
Isolated and UL registered E153432
Applications
G
Antiparallel diode for high frequency
switching devices
G
Antisaturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
Avalanche voltage rated for reliable
operation
G
Soft reverse recovery for low EMI/RFI
G
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
G
ISOPLUS 247
TM
package for clip or
spring mounting
Dimensions see IXYS CD 2000
DSEP 30-12CR
I
FAV
V
RRM
= 1200 V
t
rr
= 20 ns
= 30 A
V
RSM
V
V
RRM
V
Type
1200
1200
DSEP 30-12CR
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
70
30
tbd
A
A
A
T
C
= 85°C; rectangular, d = 0.5
t
P
< 10 μs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 1.3 A; L = 180 μH
V
A
= 1.25
·
V
R
typ.; f = 10 kHz; repetitive
250
A
0.2
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
Mounting force with clip
0.1
A
-55...+175
°C
°C
°C
175
-55...+150
T
C
= 25°C
50/60 Hz RMS; I
ISOL
≤
1 mA
165
W
2.5
kV
10...50/2...10
N/lb.
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
I
F
= 30 A;
V
R
= V
RRM
250
μA
mA
2
V
F
y
T
VJ
= 150°C
T
VJ
= 25°C
3.1
5.0
V
V
R
thJC
R
thCH
t
rr
0.9
K/W
K/W
with heatsink compound
0.25
I
F
= 1 A; -di/dt = 200 A/μs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
20
ns
I
RM
4.0
A
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