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參數(shù)資料
| 型號： | DSEI2X61-02A |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast Recovery Epitaxial Diode (FRED) |
| 中文描述： | 71 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | MINIBLOC-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 169K |
| 代理商： | DSEI2X61-02A |
2001 IXYS All rights reserved
1 - 2
D5
Symbol
Conditions
Maximum Ratings (per diode)
I
FRMS
I
FAVM
①
I
FRM
T
VJ
= T
VJM
T
C
= 85
C; rectangular; d = 0.5
t
P
< 10 μs; rep. rating; pulse width limited by T
VJM
70
30
A
A
A
375
I
FSM
T
VJ
= 45
°
C; t = 10 ms (50 Hz), sine
300
A
T
VJ
T
VJM
T
stg
-40...+150
°
C
°
C
°
C
150
-40...+150
P
tot
T
C
= 25
°
C
100
W
V
ISOL
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
Mounting torque (M4)
1.5 - 2.0
14 - 18
Nm
lb.in.
Weight
18
g
Symbol
Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25
°
C
T
VJ
= 25
°
C
T
VJ
= 125
°
C V
R
= 0.8 V
RRM
V
R
= V
V
R
= 0.8 V
RRM
100
50
μA
μA
mA
7
V
F
I
F
= 30 A;
T
VJ
= 150
°
C
T
VJ
= 25
°
C
1.4
1.6
V
V
V
T0
r
T
For power-loss calculations only
T
VJ
= T
VJM
1.01
7.1
V
m
R
thJC
R
thCK
1.25
K/W
K/W
0.05
t
rr
I
F
= 1 A; -di/dt = 100 A/μs
V
R
= 30 V; T
VJ
= 25
°
C
35
50
ns
I
RM
V
R
= 350 V; I
F
= 30 A; -di
F
/dt = 240 A/μs
L
≤
0.05 μH; T
VJ
= 100
°
C
10
11
A
d
S
d
A
a
Creeping distance on surface
Creeping distance in air
Allowable acceleration
min. 11.2
min. 11.2
max. 50
mm
mm
m/s2
I
FAVM
= 2x30 A
V
RRM
= 600 V
t
rr
= 35 ns
①
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
Features
2 independent FRED in 1 package
Isolation voltage 3000 V~
Planar passivated chips
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Low noise switching
Small and light weight
1
V
RSM
V
V
RRM
V
Type
600
600
600
600
DSEI 2x 30-06P
DSEI 2x 31-06P
IXYS reserves the right to change limits, test conditions and dimensions
Fast Recovery
Epitaxial Diode (FRED)
DSEI 2x30
DSEI 2x31
2x 30
2x31
相關PDF資料 |
PDF描述 |
|---|---|
| DSEI2X101 | TAPE,POLYIMIDE FILM,.500,.2.7 MIL,36 YD |
| DSEI2X101-12 | SDR Connector; No. of Contacts:14; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
| DSEI2X101-12P | SDR Connector; No. of Contacts:14; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
| DSEI2X30 | Fast Recovery Epitaxial Diode (FRED) |
| DSEI2X61-10P | Fast Recovery Epitaxial Diode (FRED) |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DSEI2X61-02P | 功能描述:二極管 - 通用，功率，開關 120 Amps 200V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| DSEI2x61-04C | 功能描述:整流器 120 Amps 400V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEI2X61-05C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ARRAY OF INDEPENDENT DIODES|SOT-227B |
| DSEI2X61-06B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ARRAY OF INDEPENDENT DIODES|SOT-227B |
| DSEI2X61-06C | 功能描述:整流器 DIODE Id2x60 BVdass600 RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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