參數(shù)資料
型號(hào)： UN2225
廠商： PANASONIC CORP
元件分類： 小信號(hào)晶體管
英文描述： Silicon NPN epitaxial planar type
中文描述： 600 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 110K
代理商： UN2225
1
Transistors with built-in Resistor
UNR2225
(UN2225)
, UNR2226
(UN2226)
,
UNR2227
(UN2227)
Silicon NPN epitaxial planar type
Publication date: December 2003
SJH00040CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
1
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
1
μ
A, I
C
=
0
V
CB
=
30 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
10 V, I
C
=
100 mA
30
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
20
V
Emitter-base voltage (Collector open)
5
V
Collector-base cutoff current (Emitter open)
I
CBO
1
μ
A
μ
A
Emitter
-base
cutoff current (Collector open)
I
EBO
h
FE
1
Forward current
UNR2227
70
transfer ratio
UNR2225/2226
100
600
Collector-emitter saturation voltage
V
CE(sat)
R
1
I
C
=
50 mA, I
B
=
2.5 mA
80
mV
Input resistance
UNR2226
30%
4.7
+
30%
k
UNR2227
6.8
UNR2225
10
Resistance ratio
UNR2227
R
1
/R
2
0.8
1.0
1.2
For muting
■
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■
Resistance by Part Number
Marking Symbol (R
1
)
(UN2225)
FZ
(UN2226)
FY
(UN2227)
FW
(R
2
)
6.8 k
UNR2225
UNR2226
UNR2227
10 k
4.7 k
6.8 k
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Internal Connection
Note) The part numbers in the parenthesis show conventional part number.
B
R
1
R
2
C
E
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
30
V
Collector-emitter voltage (Base open)
20
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
P
T
600
mA
Total power dissipation
200
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
相關(guān)PDF資料
PDF描述
UNR4211 Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:45ns; Series:AM29 RoHS Compliant: Yes
UNR4212 Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.25V; Access Time, Tacc:45ns; Mounting Type:Surface Mount RoHS Compliant: Yes
UNR4213 Silicon NPN epitaxial planar type
UNR4214 Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-DIP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.25V; Mounting Type:Through Hole
UNR4215 Flash Memory IC; Supply Voltage Max:5.25V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UN2226 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UN2227 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UN222X 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UN224 制造商:Panasonic Industrial Company 功能描述:ICSUB: UN224-TX
UN224-TX 制造商:Panasonic Industrial Company 功能描述:IC
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