參數(shù)資料
型號(hào)： CY7C1314BV18-167BZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 18-Mbit QDR-II SRAM 2-Word Burst Architecture
中文描述： 512K X 36 QDR SRAM, 0.5 ns, PBGA165
封裝： 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù)： 22/23頁(yè)
文件大?。?/td> 262K
代理商： CY7C1314BV18-167BZC
PRELIMINARY
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Document #: 38-05619 Rev. **
Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
Cypress products are not warranted nor intended to be used for medical, life-support, life-saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress.
Page 22 of 23
Package Diagram
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, Hitachi, IDT, NEC, and Samsung
technology. All product and company names mentioned in this document are the trademarks of their respective holders.
Ordering Information
Speed
(MHz)
250
Ordering Code
CY7C1310BV18-250BZC
CY7C1910BV18-250BZC
CY7C1312BV18-250BZC
CY7C1314BV18-250BZC
CY7C1310BV18-200BZC
CY7C1910BV18-200BZC
CY7C1312BV18-200BZC
CY7C1314BV18-200BZC
CY7C1310BV18-167BZC
CY7C1910BV18-167BZC
CY7C1312BV18-167BZC
CY7C1314BV18-167BZC
Package
Name
BB165E
Package Type
Operating
Range
Commercial
15 x 17 x 1.4 mm FBGA
200
BB165E
15 x 17x 1.4 mm FBGA
Commercial
167
BB165E
15 x 17 x 1.4 mm FBGA
Commercial
Shaded areas contain advance information. Please contact your local Cypress Sales representative for availability of these parts.
A
1
PIN 1 CORNER
1
15.00±0.10
7
1.00
0.50
-0.06
0.25 M C A B
0.05 M C
B
A
0.15(4X)
0
1
SEATING PLANE
0
0
0
PIN 1 CORNER
TOP VIEW
BOTTOM VIEW
2
3
4
5
6
7
8
9
10
10.00
1
B
C
D
E
F
G
H
J
K
L
M
N
11
11
10
9
8
6
7
5
4
3
2
1
P
R
P
R
K
M
N
L
J
H
G
F
E
D
C
B
A
C
1
5.00
0
+0.14
165-Ball FBGA (15 x 17 x 1.40 mm) Pkg. Outline (0.50 Ball Dia.) BB165E
51-85195-**
相關(guān)PDF資料
PDF描述
CY7C1314BV18-200BZC 18-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1314BV18-250BZC 18-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1910BV18 18-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1310BV18-167BZC 18-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1910BV18-167BZC 18-Mbit QDR-II SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1314BV18-167BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1314BV18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 1.8V COM QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1314BV18-200BZXC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1314BV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1314BV18-250BZCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 18MBIT 512KX36 0.45NS 165FBGA - Bulk
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