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參數(shù)資料
| 型號： | CY7C1307BV25-167BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture |
| 中文描述： | 512K X 36 QDR SRAM, 2.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 20/21頁 |
| 文件大?。?/td> | 247K |
| 代理商： | CY7C1307BV25-167BZC |
PRELIMINARY
CY7C1305BV25
CY7C1307BV25
Document #: 38-05630 Rev. **
Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 20 of 21
Ordering Information
Quad Data Rate
SRAM and QDR
SRAM comprise a new family of products developed by Cypress, IDT, NEC and Samsung.
All products and company names mentioned in this document may be the trademarks of their respective holders.
Speed
(MHz)
167
Ordering Code
CY7C1305BV25-167BZC
CY7C1307BV25-167BZC
CY7C1305BV25-133BZC
CY7C1307BV25-133BZC
CY7C1305BV25-100BZC
CY7C1307BV25-100BZC
Package
Name
BB165D
Package Type
Operating
Range
Commercial
13 x 15 x 1.4 mm FBGA
133
BB165D
13 x 15 x 1.4 mm FBGA
100
BB165D
13 x 15 x 1.4 mm FBGA
Package Diagram
51-85180-**
165 FBGA 13 x 15 x 1.40 mm BB165D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1305BV25-133BZC | 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture |
| CY7C1305BV25-167BZC | 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture |
| CY7C1306BV25 | 18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture(18Mbit，Burst of 2，QDR結(jié)構(gòu)，流水線SRAM) |
| CY7C1303BV25 | 18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture(18Mbit，Burst of 2，QDR結(jié)構(gòu)，流水線SRAM) |
| CY7C1310BV18 | 18-Mbit QDR-II SRAM 2-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1308BV25-167BZC | 制造商:Cypress Semiconductor 功能描述:256KX36 2.5V DDR SRAM (4-WORD BURST) - Bulk |
| CY7C1308DV25-250BZC | 制造商:Cypress Semiconductor 功能描述:256KX36 2.5V DDR SRAM (4-WORD BURST) - Bulk |
| CY7C1308DV25C-167BZC | 功能描述:靜態(tài)隨機存取存儲器 256Kx36 2.5V DDR 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1308DV25C-167BZCT | 功能描述:靜態(tài)隨機存取存儲器 256Kx36 2.5V DDR 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1308SV25C-167BZC | 功能描述:靜態(tài)隨機存取存儲器 CY7C1308SV25C-167BZC RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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