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| 型號： | CY7C1304V25 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 9-Mb Pipelined SRAM with QDR Architecture(帶QDR結構的9-M位流水線式 SRAM) |
| 中文描述： | 9 - MB的流水線架構的SRAM與國防評估報告（帶國防評估報告結構的9米位流水線式的SRAM） |
| 文件頁數(shù)： | 17/23頁 |
| 文件大小： | 216K |
| 代理商： | CY7C1304V25 |
CY7C1304V25
Advanced Information
17
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ....................................
–
65C to +150C
Ambient Temperature with
Power Applied................................................
–
55C to +125C
Supply Voltage on V
DD
Relative to GND........
–
0.5V to +3.6V
DC Voltage Applied to Outputs
in High Z State
[14]
...............................
–
0.5V to V
DDQ
+ 0.5V
DC Input Voltage
[14]
............................
–
0.5V to V
DDQ
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Ambient
Temperature
[15]
V
DD
V
DDQ
Com
’
l
0
C to +70
°
C
2.5+/
–
100mV
1.4V to 1.9V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min.
Max.
Unit
V
DD
Power Supply Voltage
2.4
2.6
V
V
DDQ
I/O Supply Voltage
1.4
1.9
V
V
OH
Output HIGH Voltage
I
OH
=
2.0mA, Nominal Impedance
V
DDQ
/2+0.3
V
DDQ
V
V
OL
Output LOW Voltage
I
OL
= 2.0mA, Nominal Impedance
V
SS
V
DDQ
/2-0.3
V
V
IH
Input HIGH Voltage
V
REF
+0.1
V
DDQ
+0.3
V
V
IL
Input LOW Voltage
[14]
–
0.3
V
REF
–
0.1
V
I
X
Input Load Current
GND
≤
V
I
≤
V
DDQ
GND
≤
V
I
≤
V
DDQ,
Output Disabled
5
5
μ
A
I
OZ
Output Leakage
Current
5
5
μ
A
V
REF
Input Reference Volt-
age
Typical Value = 0.75V
0.68
1.0
V
I
DD
V
DD
Operating Supply
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
6.0 ns cycle, 167 MHz
450
mA
7.5 ns cycle, 133 MHz
350
mA
10 ns cycle, 100 MHz
230
mA
I
SB1
Automatic
Power-Down
Current
Max. V
DD
, Both Ports De-
selected, V
IN
≥
V
IH
or V
IN
≤
V
IL
f = f
MAX
= 1/t
CYC,
In-
puts Static
6.0 ns cycle, 167 MHz
100
mA
7.5 ns cycle, 133 MHz
80
mA
10 ns cycle, 100 MHz
60
mA
Note:
14. Minimum voltage equals -2.0V for pulse duration less than 20 ns.
15. T
A
is the
“
instant on
”
case temperature.
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