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參數(shù)資料
| 型號(hào)： | CY7C106B-20VI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256K x 4 Static RAM |
| 中文描述： | 256K X 4 STANDARD SRAM, 20 ns, PDSO28 |
| 封裝： | 0.400 INCH, SOJ-28 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 161K |
| 代理商： | CY7C106B-20VI |
CY7C106B
CY7C1006B
Document #: 38-05037 Rev. **
Page 2 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied ............................................. –55
°C to +125°C
Supply Voltage on VCC Relative to GND
[1] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[1].................................–0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature[2]
VCC
Commercial
0
°C to +70°C
5V
± 10%
Industrial
–45
°C to +85°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C106B-25VC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 256K x 4-Bit 25ns 28-Pin SOJ 制造商:Rochester Electronics LLC 功能描述:1MB (256K X 4)- FAST ASYNCH SRAM - Bulk |
| CY7C106B-25VCT | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C106BN-15VC | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| CY7C106BN-1XW14 | 制造商:Cypress Semiconductor 功能描述:NCNR, FACT D/S ONLY, - Bulk |
| CY7C106D-10VXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M 512K IND FAST ASYNC 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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