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CY62167DV20
MoBL2
Document #: 38-05327 Rev. *B
Page 3 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential .........................................
0.2V to V
CCMAX
+ 0.2V
DC Voltage Applied to Outputs
in High-Z State
[4, 5.]
.........................
0.2V to V
CCMAX
+ 0.2V
Product Portfolio
DC Input Voltage
[4, 5.]
......................
0.2V to V
CCMAX
+ 0.2V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Industrial
Ambient Temperature (T
A
)
40
o
C to +85
o
C
V
CC
[6]
1.65V to 2.2V
Product
CY62167DV20L
V
CC
Range(V)
Typ.
1.8
Speed
(ns)
55
70
55
70
Power Dissipation
Operating, Icc (mA)
f = 1 MHz
Typ.
[7]
Max.
1.5
5
Standby, I
SB2
(
μ
A)
Typ.
[7]
2.5
2.5
2.5
2.5
f = f
MAX
Min.
1.65
Max.
2.2
Typ.
[7]
18
15
18
15
Max.
35
30
35
30
Max.
40
40
30
30
CY62167DV20LL
1.65
1.8
2.2
1.5
5
DC Electrical Characteristics
(over the operating range)
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
I
OH
=
0.1 mA
I
OL
= 0.1 mA
CY62167DV20-55
Min.
Typ.
[7]
1.4
CY62167DV20-70
Min.
Typ.
[7]
1.4
Unit
V
V
V
Max.
Max.
V
CC
= 1.65V
V
CC
= 1.65V
0.2
V
CC
+
0.2
0.4
+1
+1
0.2
V
CC
+
0.2
0.4
+1
+1
1.4
1.4
V
IL
I
IX
I
OZ
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
Output Leakage
Current
V
CC
Operating Supply
Current
–0.2
–1
–1
–0.2
–1
–1
V
μ
A
μ
A
GND < V
O
< V
CC
, Output
Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
I
CC
Vcc = 2.2V,
I
OUT
= 0mA,
CMOS level
18
1.5
35
5
15
1.5
30
5
mA
I
SB1
Automatic CE
Power-down Current
CMOS Inputs
CE
1
> V
CC
0.2V, CE
2
<
0.2V, V
IN
> V
CC
0.2V, V
IN
< 0.2V, f = f
MAX
(Address
and Data Only), f = 0 (OE,
WE, BHE and BLE)
CE
1
> V
CC
0.2V, CE
2
<
0.2V, V
IN
> V
CC
0.2V or
V
IN
< 0.2V, f = 0, V
CC
=2.2V
L
LL
2.5
2.5
40
30
2.5
2.5
40
30
μ
A
I
SB2
Automatic CE
Power-down Current
CMOS Inputs
L
LL
2.5
2.5
40
30
2.5
2.5
40
30
μ
A
Capacitance
[8]
Parameter
Description
Test Conditions
TA = 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
10
Unit
pF
pF
C
IN
C
OUT
4.
5.
6.
7.
8.
Input Capacitance
Output Capacitance
V
IL(min.)
=
2.0V for pulse durations less than 20 ns.
V
= V
+ 0.75V for pulse durations less than 20 ns.
Full device AC operation assumes a 100
μ
s ramp time from 0 to V
(min) and 100
μ
s wait time after V
stabilization.
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C.
Tested initially and after any design or process changes that may affect these parameters.
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相關代理商/技術參數(shù) |
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|---|---|
| CY62167DV20LL-55BVI | 制造商:Rochester Electronics LLC 功能描述:16M (1M X 16)- 2.0V SLOW ASYNCH SRAM - Bulk |
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| CY62167DV30LL-45ZI | 制造商:Cypress Semiconductor 功能描述: |
| CY62167DV30LL-45ZXI | 功能描述:IC SRAM 16MBIT 45NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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