參數(shù)資料
型號(hào)： CY62167DV18
廠商： Cypress Semiconductor Corp.
英文描述： 16M (1024K x 16) Static RAM
中文描述： 1,600（1024K × 16）靜態(tài)RAM
文件頁數(shù)： 6/11頁
文件大?。?/td> 161K
代理商： CY62167DV18
PRELIMINARY
CY62167DV18
MoBL2
Document #: 38-05326 Rev. *A
Page 6 of 11
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)
[13, 14]
Notes:
8.
Test conditions assume signal transition time of 3 ns or less, timing reference levels of V
CC(typ.)/2
, input pulse levels of 0 to V
CC(typ.)
, and output loading of the
specified I
At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZBE
is less than t
LZBE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any
given device.
10.
If both byte enables are toggled together, this value is 10 ns.
11.
t
, t
, t
, and t
transitions are measured when the outputs enter a high-impedance state.
12.
The internal Write time of the memory is defined by the overlap of WE
, CE
1
= V
IL
, BHE and/or BLE = V
IL
.
13.
Device is continuously selected. OE
, CE
1
= V
IL
, BHE and/or BLE = V
IL
, CE
2<Def>
14.
WE
is HIGH for Read cycle.
9.
Read Cycle No. 2 (OE Controlled)
[14, 15]
ADDRESS
ATA OUT
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
50%
50%
DATA VALID
t
t
t
t
t
t
HIGH IMPEDANC E
t
t
HIGH
OE
C E
1
I
C C
I
SB
IMPEDANC E
ADDRESS
C E2
VC C
SUPPLY
C URRENT
t
BHE
/
BLE
t
t
DATA OUT
t
RC
AC E
PD
HZC E
HZBE
HZOE
LZBE
DOE
LZOE
LZC E
DBE
PU
相關(guān)PDF資料
PDF描述
CY62167DV18L-55 16M (1024K x 16) Static RAM
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CY62167DV18LL-55 Force Sensors; Series FSS; Non-compensated; Force Range: 0 to 1500 g
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62167DV18LL-55BVI 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY62167DV18LL-55BVXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 SLO 1.8V SUPER LO PWR 1MEGX16 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62167DV18LL-55BVXIT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 SLO 1.8V SUPER LO PWR 1MEGX16 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62167DV18LL-70BVI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 1.8V 16M-Bit 1M x 16 70ns 48-Pin VFBGA 制造商:Rochester Electronics LLC 功能描述:16M (1M X 16)- 1.8V SLOW ASYNCH SRAM - Bulk
CY62167DV20L-70BVI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 16M-Bit 1M x 16 70ns 48-Pin VFBGA
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