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參數(shù)資料
| 型號(hào)： | CY62158EV30 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 8-Mbit (1024K x 8) Static RAM |
| 中文描述： | 8兆位（1024K × 8）靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大小： | 921K |
| 代理商： | CY62158EV30 |
CY62158EV30 MoBL
Document #: 38-05578 Rev. *D
Page 5 of 11
Switching Characteristics
(Over the Operating Range)
[11]
Parameter
Description
45 ns
Unit
Min
Max
Read Cycle
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
Write Cycle
[14]
Read Cycle Time
45
ns
Address to Data Valid
45
ns
Data Hold from Address Change
10
ns
CE
1
LOW and CE
2
HIGH to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
[12]
OE HIGH to High Z
[12, 13]
CE
1
LOW and CE
2
HIGH to Low Z
[12]
CE
1
HIGH or CE
2
LOW to High Z
[12, 13]
CE
1
LOW and CE
2
HIGH to Power Up
CE
1
HIGH or CE
2
LOW to Power Down
45
ns
22
ns
5
ns
18
ns
10
ns
18
ns
0
ns
45
ns
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
HZWE
t
LZWE
Write Cycle Time
45
ns
CE
1
LOW and CE
2
HIGH to Write End
Address Setup to Write End
35
ns
35
ns
Address Hold from Write End
0
ns
Address Setup to Write Start
0
ns
WE Pulse Width
35
ns
Data Setup to Write End
25
ns
Data Hold from Write End
WE LOW to High Z
[12, 13]
WE HIGH to Low Z
[12]
0
ns
18
ns
10
ns
Notes
11. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1V/ns), timing reference levels of V
CC(typ)
/2, input
pulse levels of 0 to V
, and output loading of the specified I
/I
OH
as shown in
“AC Test Loads and Waveforms” on page 4
.
12.At any given temperature and voltage condition, t
is less than t
, t
is less than t
, and t
HZWE
is less than t
LZWE
for any given device.
13.t
, t
, and t
transitions are measured when the outputs enter a high impedance state.
14.The internal write time of the memory is defined by the overlap of WE, CE
= V
, and CE
= V
. All signals must be ACTIVE to initiate a write and any of these
signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.
[+] Feedback
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| CY62158EV30LL45BVXI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 2.5V/3.3V 8M-Bit 1M x 8 45ns 48-Pin VFBGA |
| CY62158EV30LL-45BVXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8M ULTRA LO PWR HI SPD 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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| CY62158EV30LL-45IKU | 制造商:Cypress Semiconductor 功能描述: |
| CY62158EV30LL45ZSXI | 制造商:Cypress Semiconductor 功能描述: |
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