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參數(shù)資料
| 型號： | CY62158CV33LL-70BAI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1024K x 8 MoBL Static RAM |
| 中文描述： | 1M X 8 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 10 MM, 1.20 MM HEIGHT, FBGA-48 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 256K |
| 代理商： | CY62158CV33LL-70BAI |
CY62158CV25/30/33
MoBL
Document #: 38-05019 Rev. *C
Page 4 of 12
Electrical Characteristics
Over the Operating Range (continued)
CY62158CV33-55
Min.
Typ.
[4]
2.4
CY62158CV33-70
Min.
Typ.
[4]
2.4
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
Max.
Max.
Unit
V
V
V
I
OH
=
–
1.0 mA
I
OL
= 2.1 mA
V
CC
= 3.0V
V
CC
= 3.0V
0.4
V
CC
+
0.3V
0.8
+1
+1
0.4
V
CC
+
0.3V
0.8
+1
+1
2.2
2.2
V
IL
I
IX
I
OZ
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
Output Leakage
Current
V
CC
Operating Supply
Current
–
0.3
–
1
–
1
–
0.3
–
1
–
1
V
μ
A
μ
A
GND < V
O
< V
CC
, Output Disabled
I
CC
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 3.6V
I
OUT
= 0 mA
CMOS Levels
7
15
2
5.5
1.5
12
2
mA
1.5
I
SB1
Automatic CE
Power-Down Current
—
CMOS Inputs
CE
1
> V
CC
–
0.2V or CE
2
< 0.2V
V
IN
> V
CC
–
0.2V or V
IN
< 0.2V,
f = f
max
(Address and Data Only),
f=0 (OE, WE)
CE
1
> V
CC
0.2V or CE
2
< 0.2V
V
IN
> V
CC
0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.6V
10
30
10
30
μ
A
I
SB2
Automatic CE
Power-Down Current
—
CMOS Inputs
Capacitance
[5]
Parameter
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= V
CC(typ.)
Max.
6
8
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
Thermal Resistance
Description
Test Conditions
Symbol
Θ
JA
BGA
55
Unit
°
C/W
Thermal Resistance
[5]
(Junction to Ambient)
Thermal Resistance
[5]
(Junction to Case)
Still Air, soldered on a 3 x 4.5 inch, two-layer printed
circuit board
Θ
JC
16
°
C/W
Note:
5.
Tested initially and after any design or process changes that may affect these parameters.
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