詳細信息
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3DD13007 TRANSISTOR (NPN)
FEATURES
power switching applications
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 8 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC =0 9 V
Collector cut-off current ICBO VCB= 700V, IE=0 1 mA
Collector cut-off current ICEO VCE= 400V, IB=0 100 μA
Emitter cut-off current IEBO VEB= 9V, IC=0 100 μA
hFE1 VCE= 5V, IC= 2 A 8 40
DC current gain
hFE2 VCE=5V, IC=5A 5 30
Collector-emitter saturation voltage VCE(sat)
IC=2A,IB=0.4A
IC=5A,IB=1A
IC=8A,IB=2A
1
2
3
V
Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A
IC=5A,IB=1A 1.2
1.6 V
Transition frequency fT IC=500mA,VCE=10V,
f=1MHZ 4 MHZ
Collector output capacitance Cob VCE=10V,IE=0,f=0.1MHz 80 pF
Fall time tf VCC=125V, IC=5A
IB1=-IB2=1A 0.7 μs
Storage time ts IC=0.5A 2.7 7.7 μs
CLASSIFICATION OF hFE(1)
Rank
Range 8-15 15-20 20-25 25-30 30-35 35-40