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參數(shù)資料
| 型號(hào)： | BGD802 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Hybrid amplifier module operating at a supply voltage of 24 V (DC). |
| 封裝： | BGD802<SOT115J|<<<1<Always Pb-free,;BGD802/02<SOT115J|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 374K |
| 代理商： | BGD802 |
2002 Jan 23
6
NXP Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
BGD802
Table 4
Bandwidth 40 to 550 MHz; V
B
= 24 V; T
case
= 30
°
C; Z
S
= Z
L
= 75
Ω
Notes
1.
f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 493.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 548.5 MHz.
Measured according to DIN45004B:
f
p
= 540.25 MHz; V
p
= V
o
;
f
q
= 547.25 MHz; V
q
= V
o
6 dB;
f
r
= 549.25 MHz; V
r
= V
o
6 dB;
measured at f
p
+ f
q
f
r
= 538.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 550 MHz
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 50 MHz
77 channels flat;
V
o
= 44 dBmV;
measured at 547.25 MHz
77 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
18
18.5
0.2
20
18.5
17
16
20
18.5
17
16
45
18.5
19.3
35
31
27
22
29.5
29
25.5
23
67
19
2
±
0.3
+45
65
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
s
11
slope cable equivalent
flatness of frequency response
input return losses
s
22
input return losses
s
21
CTB
phase response
composite triple beat
X
mod
cross modulation
66
63
dB
CSO
composite second order distortion 77 channels flat;
V
o
= 44 dBmV;
measured at 548.5 MHz
note 1
d
im
=
60 dB; note 2
see Table 1
note 3
67
63
dB
d
2
V
o
NF
I
tot
second order distortion
output voltage
noise figure
total current consumption (DC)
65
395
72
410
dB
dBmV
dB
mA
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