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參數(shù)資料
| 型號： | BGD802 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 運(yùn)動控制電子 |
| 英文描述： | Hybrid amplifier module operating at a supply voltage of 24 V (DC). |
| 封裝： | BGD802<SOT115J|<<<1<Always Pb-free,;BGD802/02<SOT115J|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 374K |
| 代理商： | BGD802 |
2002 Jan 23
5
NXP Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
BGD802
Table 3
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
case
= 30
°
C; Z
S
= Z
L
= 75
Ω
Notes
1.
f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
6 dB;
f
r
= 749.25 MHz; V
r
= V
o
6 dB;
measured at f
p
+ f
q
f
r
= 738.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 750 MHz
f = 40 to 750 MHz
f = 40 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
f = 50 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 745.25 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
18
18.5
0.2
20
18.5
17
15.5
14
20
18.5
17
15.5
14
45
18.5
19.4
35
31
27
22
20
29.5
29
25.5
23
22
60.5
19
2
±
0.5
+45
58
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
s
11
slope cable equivalent
flatness of frequency response
input return losses
s
22
output return losses
s
21
CTB
phase response
composite triple beat
X
mod
cross modulation
62.5
60
dB
CSO
composite second order distortion 110 channels flat;
V
o
= 44 dBmV;
measured at 746.5 MHz
note 1
d
im
=
60 dB; note 2
see Table 1
note 3
66
60
dB
d
2
V
o
NF
I
tot
second order distortion
output voltage
noise figure
total current consumption (DC)
64
395
72
410
dB
dBmV
dB
mA
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