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參數(shù)資料
| 型號(hào)： | BFQ621 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN 7 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-172A2, 4 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 108K |
| 代理商： | BFQ621 |
1995 Sep 26
4
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
CHARACTERISTICS
T
j
= 25
°
C (unless otherwise specified).
Notes
1.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
2.
d
im
=
60dB (DIN45004B); see Fig.2; I
C
= 120 mA; V
CE
= 18 V; R
L
= 75
; T
amb
= 25
°
C;
V
p
= V
O
; f
p
= 445.25 MHz;
V
q
= V
O
6 dB; f
q
= 453.25 MHz;
V
r
= V
O
6 dB; f
r
= 455.25 MHz;
measured at f
(p + q
r)
= 443.25 MHz; see Fig.5.
d
im
=
60dB (DIN45004B); see Fig.2; I
C
= 120 mA; V
CE
= 18 V; R
L
= 75
; T
amb
= 25
°
C;
V
p
= V
O
; f
p
= 795.25 MHz;
V
q
= V
O
6 dB; f
q
= 803.25 MHz;
V
r
= V
O
6 dB; f
r
= 805.25 MHz;
measured at f
(p + q
r)
= 793.25 MHz; see Fig.6.
V
O
= 50 dBmV = 316 mV; I
C
= 90 mA; V
CE
= 18 V; R
L
= 75
; T
amb
= 25
°
C;
measured at f
(p + q)
= 450 MHz; see Fig.7.
V
O
= 50 dBmV = 316 mV; I
C
= 90 mA; V
CE
= 18 V; R
L
= 75
; T
amb
= 25
°
C;
measured at f
(p + q)
= 810 MHz; see Fig.8.
3.
4.
5.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
f
T
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 10 mA; I
B
= 0
emitter-base breakdown voltage
collector-base leakage current
DC current gain
transition frequency
I
C
= 0.1 mA; I
E
= 0
50
7
25
16
2
100
160
V
V
V
μ
A
I
E
= 0.1 mA; I
C
= 0
I
E
= 0; V
CB
= 18 V
I
C
= 50 mA; V
CE
= 10 V
I
C
= 120 mA; V
CE
= 18 V;
f = 1 GHz; see Fig.3
I
E
= i
e
= 0; V
CB
= 18 V;
f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V;
f = 1 MHz
I
C
= 0; V
CE
= 18 V; f = 1 MHz;
see Fig.4
I
C
= 120 mA; V
CE
= 18 V;
f = 500 MHz; T
amb
= 25
°
C;
I
C
= 120 mA; V
CE
= 18 V;
f = 800 MHz; T
amb
= 25
°
C;
note 2
note 3
note 4
note 5
GHz
C
c
collector capacitance
1.5
pF
C
e
emitter capacitance
5
pF
C
re
feedback capacitance
0.85
1.2
pF
G
UM
maximum unilateral power gain;
note 1
18.5
dB
14.5
dB
V
O
output voltage
1.35
1.2
60
60
V
V
dB
dB
d
2
second order intermodulation
distortion
G
UM
10
s
)
1
2
1
s
11
–
(
s
22
2
–
(
)
------------------------------------------------------------ dB.
log
=
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