參數(shù)資料
型號(hào): AUIRF1405
元件分類: JFETs
英文描述: 75 A, 55 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 1/11頁
文件大小: 206K
代理商: AUIRF1405
HEXFET Power MOSFET
06/23/11
www.irf.com
1
AUIRF1405
PD - 97691
V(BR)DSS
55V
RDS(on) typ.
4.6m
Ω
max
5.3m
Ω
ID (Silicon Limited)
169Ah
ID (Package Limited)
75A
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dv/dt Rating
l
175°COperatingTemperature
l
Fast Switching
l
FullyAvalancheRated
l
RepetitiveAvalancheAllowed
up to Tjmax
l
Lead-Free, RoHS Compliant
l
AutomotiveQualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF1405
S
D
G
D
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
i
mJ
dv/dt
Peak Diode recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.45
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
330
2.2
± 20
Max.
169
h
118
h
680
75
560
See Fig.12a, 12b, 15, 16
5.0
AUTOMOTIVE GRADE
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