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參數(shù)資料
| 型號(hào)： | AT90S1200A-4SC |
| 廠商： | Atmel |
| 文件頁數(shù)： | 18/71頁 |
| 文件大?。?/td> | 0K |
| 描述： | MCU 1K FLASH 4MHZ LV 20-SOIC |
| 標(biāo)準(zhǔn)包裝： | 37 |
| 系列： | AVR® 90S |
| 核心處理器： | AVR |
| 芯體尺寸： | 8-位 |
| 速度： | 4MHz |
| 連通性： | SPI |
| 外圍設(shè)備： | POR，WDT |
| 輸入/輸出數(shù)： | 15 |
| 程序存儲(chǔ)器容量： | 1KB（512 x 16） |
| 程序存儲(chǔ)器類型： | 閃存 |
| EEPROM 大?。?/td> | 64 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 6 V |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | 0°C ~ 70°C |
| 封裝/外殼： | 20-SOIC（0.295"，7.50mm 寬） |
| 包裝： | 管件 |
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25
AT90S1200
0838H–AVR–03/02
EEPROM Read/Write
Access
The EEPROM access registers are accessible in the I/O space.
The write access time is in the range of 2.5 - 4 ms, depending on the V
CC voltages. A
self-timing function, however, lets the user software detect when the next byte can be
written. If the user code contains code that writes the EEPROM, some precaution must
be taken. In heavily filtered power supplies, V
CC is likely to rise or fall slowly on Power-
up/down. This causes the device for some period of time to run at a voltage lower than
specified as minimum for the clock frequency used. CPU operation under these condi-
tions is likely cause the program counter to perform unintentional jumps and eventually
execute the EEPROM write code. To secure EEPROM integrity, the user is advised to
use an external under-voltage reset circuit in this case.
In order to prevent unintentional EEPROM writes, a specific write procedure must be fol-
lowed. Refer to “EEPROM Control Register – EECR” on page 25 for details on this.
When the EEPROM is read or written, the CPU is halted for two clock cycles before the
next instruction is executed.
EEPROM Address Register –
EEAR
Bit 7, 6 – Res: Reserved Bits
These bits are reserved bits in the AT90S1200 and will always read as zero.
Bits 5..0 – EEAR5..0: EEPROM Address
The EEPROM Address Register (EEAR5..0) specifies the EEPROM address in the 64-
byte EEPROM space. The EEPROM data bytes are addressed linearly between 0 and
63.
EEPROM Data Register –
EEDR
Bits 7..0 – EEDR7..0: EEPROM Data
For the EEPROM write operation, the EEDR register contains the data to be written to
the EEPROM in the address given by the EEAR register. For the EEPROM read opera-
tion, the EEDR contains the data read out from the EEPROM at the address given by
EEAR.
EEPROM Control Register –
EECR
Bits 7..2 – Res: Reserved Bits
These bits are reserved bits in the AT90S1200 and will always be read as zero.
Bit
765
432
10
$1E
––
EEAR5
EEAR4
EEAR3
EEAR2
EEAR1
EEAR0
EEAR
Read/Write
R
R/W
Initial Value
0
Bit
765
432
10
$1D
MSB
LSB
EEDR
Read/Write
R/W
Initial Value
0
Bit
765
432
10
$1C
–––
EEWE
EERE
EECR
Read/Write
R
R/W
Initial Value
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT90S1200A-4SI | 功能描述:8位微控制器 -MCU 1k bit RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| AT90S1200A-4YC | 功能描述:8位微控制器 -MCU 1K Flash 3V RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| AT90S1200A-4YI | 功能描述:8位微控制器 -MCU 1k bit RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| AT90S2313 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-bit Microcontroller with 2K Bytes of In-System Programmable Flash |
| AT90S2313_02 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-bit Microcontroller with 2K Bytes of In-System Programmable Flash |
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