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參數(shù)資料
| 型號： | AS7C31024B-12TCN |
| 廠商： | ALLIANCE MEMORY INC |
| 元件分類： | SRAM |
| 英文描述： | IC,AS7C31024B-12TCN,TSOP-32 I, SRAM,12NS,128K X 8,3.3V |
| 中文描述： | 128K X 8 STANDARD SRAM, 12 ns, PDSO32 |
| 封裝： | 8 X 20 MM, LEAD FREE, TSOP1-32 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 120K |
| 代理商： | AS7C31024B-12TCN |
AS7C31024B
3/24/04, v.1.2
Alliance Semiconductor
P. 6 of 9
Write waveform 2 (CE1 and CE2 controlled)10,11,12
AC test conditions
Notes
1
During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification.
2
This parameter is sampled and not 100% tested.
3
For test conditions, see AC Test Conditions, Figures A, and B.
4tCLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured ±500 mV from steady-state voltage.
5
This parameter is guaranteed, but not 100% tested.
6WE is high for read cycle.
7CE1 and OE are low and CE2 is high for read cycle.
8
Address valid prior to or coincident with CE1 transition Low.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A
11
All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
14 N/A
tAW
Address
CE1
WE
DOUT
tCW1, tCW2
tWP
tDW
tDH
tAH
tWC
tAS
CE2
Data valid
DIN
tWR
tWZ
255
– Output load: see Figure B.
– Input pulse level: GND to 3.0V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
C13
320
DOUT
GND
+3.3V
168
Thevenin equivalent:
DOUT
+1.728V
Figure B: 3.3V Output load
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2 ns
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| AS7C31024B-12TCNTR | 功能描述:靜態(tài)隨機存取存儲器 1M, 3.3V, 12ns, FAST 128K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C31024B-12TJC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K X 8 CMOS SRAM |
| AS7C31024B-12TJCN | 功能描述:靜態(tài)隨機存取存儲器 1M, 3.3V, 12ns, FAST 128K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C31024B-12TJCNTR | 功能描述:靜態(tài)隨機存取存儲器 1M, 3.3V, 12ns, FAST 128K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C31024B-15JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K X 8 CMOS SRAM |
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