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參數(shù)資料
| 型號： | AS7C1024B-15TJIN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 128K X 8 CMOS SRAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 15 ns, PDSO32 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-32 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 111K |
| 代理商： | AS7C1024B-15TJIN |
AS7C1024B
3/26/04, v 1.2
Alliance Semiconductor
P. 6 of 9
Write waveform 2 (CE1 and CE2 controlled)
10,11,12
AC test conditions
Notes
1
2
3
4
5
6
7
8
9
10 N/A
11
12 CE1 and CE2 have identical timing.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
During V
CC
power-up, a pull-up resistor to V
CC
on CE1 is required to meet I
SB
specification.
This parameter is sampled and not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A and B.
t
CLZ
and t
CHZ
are specified with CL = 5pF, as in Figure C. Transition is measured ±500 mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE is high for read cycle.
CE1 and OE are low and CE2 is high for read cycle.
Address valid prior to or coincident with CE1 transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
All write cycle timings are referenced from the last valid address to the first transitioning address.
t
AW
Address
CE1
WE
D
OUT
t
CW1
, t
CW2
t
WP
t
DW
Data valid
t
DH
t
AH
t
WR
t
WZ
t
WC
t
AS
CE2
D
IN
– Output load: see Figure B.
– Input pulse level: GND to 3.5V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
168
+1.728V
Thevenin equivalent:
D
OUT
255
C
13
480
D
OUT
GND
+5V
Figure B: 5V Output load
10%
90%
10%
90%
GND
+3.5V
Figure A: Input pulse
2 ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C1024B-15TJINTR | 功能描述:IC SRAM 1MBIT 15NS 32SOJ 制造商:alliance memory, inc. 系列:- 零件狀態(tài):在售 存儲器類型:易失 存儲器格式:SRAM 技術(shù):SRAM - 異步 存儲容量:1Mb （128K x 8） 寫周期時間 - 字，頁:15ns 訪問時間:15ns 存儲器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TA） 標(biāo)準(zhǔn)包裝:1,000 |
| AS7C1024B-20JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM |
| AS7C1024B-20JCN | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M, 5V, 20ns FAST 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1024B-20JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M, 5V, 20ns FAST 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1024B-20JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM |
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