參數(shù)資料
型號: APT50M85B2VFR
廠商: Advanced Power Technology Ltd.
元件分類: 數(shù)字電位計
英文描述: WASHER FOR THE SPECTROL 534 SERIES POTENTIOMETER
中文描述: 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。
文件頁數(shù): 2/2頁
文件大?。?/td> 40K
代理商: APT50M85B2VFR
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
INFORMATION
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
DYNAMIC CHARACTERISTICS
APT50M85 B2VFR - LVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 15V
DD
DSS
D
= I
D
[Cont.] @ 25
°
C
G
= 0.6
MIN
TYP
8630
1160
440
360
57
151
16
18
60
6
MAX
UNIT
pF
nC
ns
MIN
TYP
56
224
MAX
1.3
5
270
540
1.8
6.2
16
29
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25
°
C, L = 1.91mH, R
G
=
25 , Peak I
L
= 56A
5
I
S
-I
D
[Cont.],
di
/
dt
= 100A/μs, T
j
150
°
C, R
G
= 2.0 , V
R
= 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.20
40
UNIT
°
C/W
Characteristic
Junction to Case
Junction to Ambient
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Collector
Emitter
Gate
Collector
Emitter
Gate
C
C
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.762.79 (.110)
3.18 (.125)
3.10 (.122)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
5.38 (.212)
(.14.50
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
TO-264 (L) Package Outline
T-MAX
(B2) Package Outline
These dimensions are equal to the TO-247 without the mounting hole.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
0
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