參數(shù)資料
型號(hào)： AON4603
廠商： ALPHA
英文描述： Complementary Enhancement Mode Field Effect Transistor
中文描述： 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 153K
代理商： AON4603
AON4603
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-12
-2
81
115
136
4.8
-0.82
100
T
J
=125°C
180
m
S
V
A
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
-1
-2.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge(10V)
260
55
44
4.3
340
pF
pF
pF
6.5
Q
g
(10)
Q
g
(4.5)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
5.8
3
0.78
1.6
7
6
15
7.5
12.5
5.5
7
4
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
15
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-3.6A, dI/dt=100A/
μ
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, I
D
=-3.6A
I
F
=-3.6A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-15V, f=1MHz
Total Gate Charge(4.5V)
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, R
L
=4.2
,
R
GEN
=3
Gate resistance
m
V
GS
=-4.5V, I
D
=-2A
V
DS
=-5V, I
D
=-3.6A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-3.6A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=-250
μ
A, V
GS
=0V
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 0 : March 2006
≤
10s thermal
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AON4604 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N/P-CH 20V 5.4A/3.8A 8-Pin DFN
AON4605 功能描述:MOSFET COMPL 30V 4.3/3.4A DFN3X2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AON4605_001 功能描述:MOSFET N/P-CH 30V 4.3A/3.4A 8DFN 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:N 和 P 溝道 FET 功能:邏輯電平門 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:4.3A，3.4A 不同?Id，Vgs 時(shí)的?Rds On（最大值）:50 毫歐 @ 4.3A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:5nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:210pF @ 15V 功率 - 最大值:1.9W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SMD，扁平引線 供應(yīng)商器件封裝:8-DFN（3x2） 標(biāo)準(zhǔn)包裝:1
AON4605_002 功能描述:MOSFET N/P-CH 30V DFN 制造商:alpha & omega semiconductor inc. 系列:- 零件狀態(tài):最後搶購(gòu) 標(biāo)準(zhǔn)包裝:3,000
AON4701 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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