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參數(shù)資料
| 型號： | AON4603 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強模式互補場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 153K |
| 代理商： | AON4603 |
AON4603
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
12
1.9
55
78
95
5.4
0.82
75
T
J
=125°C
115
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
2.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
200
40
20
2.3
260
pF
pF
pF
3.5
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
6.5
3.1
1.2
1.6
3.3
2.5
13.2
1.7
9.4
3.5
8.5
4
nC
nC
nC
nC
ns
ns
ns
ns
12
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS
=10V, V
DS
=15V, I
D
=4A
V
GS
=10V, V
DS
=15V, R
L
=3.75
,
R
GEN
=3
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
m
V
GS
=4.5V, I
D
=2A
V
DS
=5V, I
D
=4A
I
S
=1A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
N-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=4A
V
DS
=24V, V
GS
=0V
I
D
=250
μ
A, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Body Diode Reverse Recovery Charge I
F
=4A, dI/dt=100A/
μ
s
Body Diode Reverse Recovery Time
I
F
=4A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 0 : March 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha and Omega Semiconductor, Ltd.
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