- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375339 > AON3816 (ALPHA) Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | AON3816 |
| 廠商： | ALPHA |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見的漏雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 124K |
| 代理商： | AON3816 |
AON3816
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
10
μ
A
±12
0.4
20
14
18
15
17
V
V
A
0.75
1.1
18
23
19
22.5
21
0.75
22
29
23
28
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
1315
219
183
2.1
pF
pF
pF
k
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
15
6.7
4.6
1
2.8
5.6
5.9
nC
nC
nC
μ
s
μ
s
μ
s
μ
s
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=4A
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250
μ
A
Gate-Body leakage current
Gate-Source Breakdown Voltage
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
μ
A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=2.5V, I
D
=4A
V
DS
=5V, I
D
=4A
I
S
=1A,V
GS
=0V
V
GS
=4V, I
D
=4A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=5V, V
DS
=10V, R
L
=2.5
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=10V, I
D
=4A
Turn-On DelayTime
V
GS
=0V, V
DS
=10V, f=1MHz
Reverse Transfer Capacitance
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
F. The continuous current rating is limited by wire-bonding.
Rev 2: Feb 15. 2008
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AON4413 | P-Channel Enhancement Mode Field Effect Transistor |
| AON4602 | Complementary Enhancement Mode Field Effect Transistor |
| AON4602L | Complementary Enhancement Mode Field Effect Transistor |
| AON4603 | Complementary Enhancement Mode Field Effect Transistor |
| AON4604 | Complementary Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AON3816_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AON3816_101 | 功能描述:MOSFET 2N-CH 20V 4A 8-DFN 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 N 溝道（雙）共漏 FET 功能:邏輯電平門 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:- 不同?Id，Vgs 時(shí)的?Rds On（最大值）:22 毫歐 @ 4A，4.5V 不同 Id 時(shí)的 Vgs（th）（最大值）:1.1V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:13nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）:1100pF @ 10V 功率 - 最大值:2.5W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SMD，扁平引線 供應(yīng)商器件封裝:8-DFN（3x3） 標(biāo)準(zhǔn)包裝:1 |
| AON3818 | 功能描述:MOSFET 2N-CH 24V 8A 制造商:alpha & omega semiconductor inc. 系列:AlphaMOS 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:2 N 溝道（雙）共漏 FET 功能:邏輯電平門 漏源極電壓（Vdss）:24V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:8A 不同?Id，Vgs 時(shí)的?Rds On（最大值）:13.5 毫歐 @ 8A，4.5V 不同 Id 時(shí)的 Vgs（th）（最大值）:1.2V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:15nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）:840pF @ 12V 功率 - 最大值:2.7W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SMD，扁平引線 供應(yīng)商器件封裝:8-DFN（2.9x2.3） 標(biāo)準(zhǔn)包裝:3,000 |
| AON3820 | 功能描述:MOSFET 2 N-CHANNEL 24V 8A 8DFN 制造商:alpha & omega semiconductor inc. 系列:AlphaMOS 零件狀態(tài):在售 FET 類型:2 個(gè) N 溝道（雙） FET 功能:標(biāo)準(zhǔn) 漏源電壓（Vdss）:24V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:8A（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:8.9 毫歐 @ 8A, 4.5V 不同 Id 時(shí)的 Vgs（th）（最大值）:1.3V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:20nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:1325pF @ 12V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SMD，扁平引線 供應(yīng)商器件封裝:8-DFN（3x3） 標(biāo)準(zhǔn)包裝:3,000 |
| AON420-B | 制造商:IDEC CORPORATION 功能描述:Pushbutton Alternate N Series |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。