- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375319 > AN606 (Vishay Intertechnology,Inc.) Current-Sensing Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | AN606 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Current-Sensing Power MOSFETs |
| 中文描述： | 電流感應(yīng)功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 68K |
| 代理商： | AN606 |
AN606
Vishay Siliconix
www.vishay.com
2
Document Number: 71991
17-Dec-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
SENSE DIE
0
0.00
2
4
6
8
10
0.02
0.04
0.06
0.08
0.10
On-Resistance vs. Sense Current
I
SENSE
(A)
0
200
400
600
800
1000
1200
0
4
8
12
16
20
Current Ratio (I
(MAIN)/IS
)
vs. Gate-Source Voltage (Figure 1)
R
0
2
4
6
8
10
0
2
4
6
8
10
On-Resistance vs. Gate-Source Voltage
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
Gate-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
D
= 10 mA
R
S
= 6.6
R
S
= 4.7
R
S
= 1.1
R
S
= 0.5
G
V
G
SENSE
S
KELVIN
R
S
R
S
= 2.2
FIGURE 2.
Current-Sensing Die Characteristics and Schematic
r
m
r
m
Definition of Current-Sensing Parameters
The current-sense ratio, r, is the quotient of the number of cells
terminated on the sense terminal to the total number of cells on
the MOSFET die.
To derive the value of
r
using the above definition requires
detailed die design. However, the quotient of drain current to
the sense current provides the same value because these
current values are the sum of cell current in each path.
Mathematically:
r = I
D
/I
SENSE
I
D
is drain current
I
SENSE
is the current flowing out of the sense terminal and into
the sense resistor, R
SENSE
Mirror active resistance, r
m(on)
, is the resistance of parallel
connected cells used in the sense chain when the device is on.
Being r
DS(on)
as in any other MOSFET, the value depends on
the gate drive, drain current, and junction temperature.
Accordingly, r
m(on)
is defined at given values of V
GS
, I
DRAIN
,
and T
J
junction.
By definition, for the sense die, refer to Figure 2. Mirror active
resistance r
m(on)
is specified at the gate-source voltages, V
GS
at 4.5 V and 10 V, corresponding drain-source current I
SENSE
up to 0.1 A, and junction temperature T
J
at 25
C. The
temperature coefficient of r
m(on)
is the same as that of r
DS(on)
.
Refer to the on-resistance vs. junction temperature curve in
Figure 3.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AN607P | Circular Connector; No. of Contacts:21; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| AN608P | Circular Connector; No. of Contacts:100; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| AN6095SH | Circular Connector; No. of Contacts:100; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| AN6096FHN | Transmission and reception IC for cellular telephone |
| AN610 | PolarPAK Solder Joint Reliability Based on Thermal Fatigue IPC-9701 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AN-6067 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Design and Application of Primary-Side Regulation (PSR) PWM Controller |
| AN-6069 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Application Review and Comparative Evaluation of Low-Side Gate Drivers |
| AN-6073 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Highly Integrated Green-Mode PWM Controller |
| AN-6075 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Compact Green-Mode Adapter |
| AN-6076 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Bootstrap Circuit for High-Voltage Gate-Drive IC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。