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| 型號(hào)： | AM29LV256MH123RPGF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| 中文描述： | 256兆位（16 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /價(jià)外控制 |
| 文件頁(yè)數(shù)： | 68/69頁(yè) |
| 文件大?。?/td> | 546K |
| 代理商： | AM29LV256MH123RPGF |
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66
Am29LV256M
December 16, 2005
D A T A S H E E T
Table 4. SecSi Sector Contents
Added x8 and x16
Operating Ranges
Changed the V
IO
supply range to 1.65–3.6 V.
Erase and Programming Performance
Changed the typicals and/or maximums of Chip Erase
Time, Effective Write Buffer Program Time, and Pro-
gram Time to TBD.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
Table 7. Device Geometry Definition
Changed the x16 data for 2Dh to 00FFh.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the SecSi Sector, autoselect, and CFI
functions are unavailable when a program or erase
operation is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address.
Revision B+5 (November 11, 2002)
Product Selector Guide and Read Only Operations
Added a 30 ns Page Access time and Output Enable
Access time to the 113R and 123R Speed Options.
Revision B+6 (December 2, 2002)
Global
Added Sector Group Protection and added Table 4.
Product Selector Guide
Added V
IO
s to table and removed Note #2
Ordering Information
Corrected typos in V
IO
ranges.
Removed Note.
Figure 6. Program Suspend/Program Resume
Change wait time to 15
μ
s.
Operating Ranges
Corrected typos in V
IO
ranges.
Removed full voltage range.
CMOS Compatible
Changed V
IH1
and V
IH2
minimum to 1.9.
Removed typos in notes.
Read-Only Characteristics
Added note #3.
Hardware Reset, Erase and Program Operations,
Temporary Sector Unprotect, and Alternate CE#
Controlled Erase and Program Operations
Added Note.
Revision C (February 14, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Product Selector Guide
Removed 93R speed option.
Added note 2.
Ordering Information
Corrected Valid Combination to reflect speed option
changes.
Added Note.
AC Characteristics
Removed 93, 93R speed option.
Added Note
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also added notes 5 and 6.
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also added notes
5.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 4.
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| AM29LV256MH30EF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
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| AM29LV256MH30FF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256ML103FF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256ML103FI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV256MH123RPGI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV256MH94REI | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays |
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
| AM29LV320DB90EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
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