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參數(shù)資料
| 型號： | Am29LV160BT80RFI |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 2/46頁 |
| 文件大?。?/td> | 649K |
| 代理商： | AM29LV160BT80RFI |
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P R E L I M I N A R Y
2
Am29LV160B
GENERAL DESCRIPTION
The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory
organized as 2,097,152 bytes or 1,048,576 words. The
device is offered in 48-ball FBGA, 44-pin SO, and 48-pin
TSOP packages. The word-wide data (x16) appears on
DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0.
This device is designed to be programmed in-system with
the standard system 3.0 volt V
CC
supply. A 12.0 V V
PP
or 5.0
V
CC
are not required for write or erase operations. The
device can also be programmed in standard
EPROM programmers.
The device offers access times of 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states. To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a
single 3.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The Am29LV160B is entirely command set compatible
with the
JEDEC single-power-supply Flash
standard
. Commands are written to the command reg-
ister using standard microprocessor write timings. Reg-
ister contents serve as input to an internal state-
machine that controls the erase and programming cir-
cuitry. Write cycles also internally latch addresses and
data needed for the programming and erase opera-
tions. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The
Unlock Bypass
mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the
Embedded Erase
algorithm—an internal algorithm that automatically pre-
programs the array (if it is not already programmed) be-
fore executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits
. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits write operations dur-
ing power transitions. The
hardware sector protection
feature disables both program and erase operations in
any combination of the sectors of memory. This can be
achieved in-system or via programming equipment.
The
Erase Suspend/Erase Resume
feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode
.
The system can also place the device into the
standby
mode
. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV160BT80RSCB | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV160BT80RSE | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV160BT80RSI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160B | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV160BT80REE | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252"; Container: Bulk; Features: High Voltage; Unmarked |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160BT80SC | 制造商:AMD 功能描述:* |
| AM29LV160BT-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP |
| AM29LV160BT-90FC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| AM29LV160DB120EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV160DB-120EIT | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 120NS 48TSOP - Tape and Reel |
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