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參數(shù)資料
| 型號： | Am27C4096-95DEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (256 K x 16-Bit) CMOS EPROM |
| 中文描述： | 4兆位（256畝× 16位）的CMOS存儲器 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 165K |
| 代理商： | AM27C4096-95DEB |
8
Am27C4096
DC CHARACTERISTICS over operating range (unless otherwise specified)
Caution
: The device must not be removed from (or inserted into) a socket when V
CC
or V
PP
is applied.
Notes:
1. V
CC
must be applied simultaneously or before V
PP
, and removed simultaneously or after V
PP
..
2. I
CC1
is tested with OE# = V
IH
to simulate open outputs.
3.
Minimum DC Input Voltage is –0.5 V During transitions, the inputs may overshoot to –2.0 V for periods less than 20 ns.
Maximum DC Voltage on output pins is V
CC
+ 0.5 V, which may overshoot to V
CC
+ 2.0 V for periods less than 20 ns.
Figure 1.
Typical Supply Current vs. Frequency
V
CC
= 5.5 V, T = 25
°
C
Figure 2.
Typical Supply Current vs. Temperature
V
CC
= 5.5 V, f = 5 MHz
Parameter
Symbol
Parameter Description
Test Conditions
Min
Max
Unit
V
OH
Output HIGH Voltage
I
OH
= –400 μA
2.4
V
V
OL
Output LOW Voltage
I
OL
= 2.1 mA
0.45
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
–0.5
+0.8
V
I
LI
Input Load Current
V
IN
= 0 V to V
CC
1.0
μA
I
LO
Output Leakage Current
V
OUT
= 0 V to V
CC
5.0
μA
I
CC1
V
CC
Active Current (Note 2)
CE# = V
IL
, f = 5 MHz,
I
OUT
= 0 mA
C/I Devices
50
mA
E Devices
60
I
CC2
V
CC
TTL Standby Current
CE# = V
IH
1.0
mA
I
CC3
V
CC
CMOS Standby Current
CE# = V
CC
±
0.3 V
100
μA
I
PP1
V
PP
Supply Current (Read)
CE# = OE# = V
IL
, V
PP
= V
CC
100
μA
11408F-5
1
2
3
4
5
6
7
8
9
10
35
30
25
20
15
Frequency in MHz
S
i
11408F-6
–75 –50 –55
0
25
50
75 100 125 150
35
30
25
20
15
Temperature in
°
C
S
i
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