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參數(shù)資料
| 型號(hào)： | AA1L3N |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | AA1L3N |
APTGF150A120T3AG
APT
G
F150A120T
3AG
–
Rev
0
July,
2008
www.microsemi.com
4 – 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
0123
456
VCE (V)
I C
(A
)
Output Characteristics
VGE=15V
VGE=12V
VGE=20V
VGE=9V
0
50
100
150
200
250
300
01
23
4
5
6
VCE (V)
I C
(A
)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
56
78
9
10
11
12
VGE (V)
I C
(A
)
Energy losses vs Collector Current
Eon
Eoff
0
8
16
24
32
40
48
56
0
50
100
150
200
250
300
IC (A)
E
(mJ
)
VCE = 600V
VGE = 15V
RG = 5.6
TJ = 125°C
Eon
Eoff
0
10
20
30
40
50
60
70
0
5 10 15 20 25 30 35 40 45 50
Gate Resistance (ohms)
E
(
m
J
)
VCE = 600V
VGE =15V
IC = 150A
TJ = 125°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
50
100
150
200
250
300
350
0
300
600
900
1200
1500
VCE (V)
I C
(A
)
VGE=15V
TJ=125°C
RG=5.6
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Therm
a
lI
m
pedance
(°C
/W)
IGBT
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| AA1L3Z | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AA1L3N(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| AA1L3Z | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN SILICON TRANSISTOR |
| AA1L4L | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN SILICON TRANSISTOR |
| AA1L4L(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| AA1L4M | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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