參數(shù)資料
型號(hào): 934056610135
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.2 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC, SMD, UMT6, SC-88, 6 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 60K
代理商: 934056610135
2001 May 14
2
Philips Semiconductors
Product specication
High-speed switching diode array
BAV99S
FEATURES
Small plastic SMD package
High switching speed
Two electrically isolated series configuration arrays
Low capacitance.
APPLICATIONS
General purpose switching in e.g. surface mounted
circuits.
Rail to rail (ESD) protection.
DESCRIPTION
The BAV99S consists of four single die high speed
switching diodes in two electrically isolated series
configurations, encapsulated in the small SMD SC-88
(SOT363) plastic package.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
cathode (k2)
3
cathode (k3)/anode (a4)
4
anode (a3)
5
cathode (k4)
6
cathode (k1)/anode (a2)
Fig.1
Simplified outline (SC-88; SOT363)
and symbol.
Marking code: K1.
MSA370
12
3
65
4
Top view
65
4
12
3 MBL211
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Solder points at pins: 2, 3, 5 and 6.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4.5
A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Ts ≤ 85 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
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