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參數(shù)資料
| 型號(hào)： | 934056610115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 60K |
| 代理商： | 934056610115 |
2001 May 14
3
Philips Semiconductors
Product specication
High-speed switching diode array
BAV99S
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF =50mA
1
V
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR =75V
1
A
VR =25V; Tj = 150 °C30
A
VR =75V; Tj = 150 °C50
A
Cd
diode capacitance
VR = 0; f = 1 MHz; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR =10mA;
RL = 100 ; measured at IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
when switched to IF = 10 mA; tr = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
Note
1. Solder points at pins: 2, 3, 5 and 6.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
≤260
K/W
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