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參數(shù)資料
| 型號： | 934056531115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SMD, 5 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 934056531115 |
2001 Sep 03
2
Philips Semiconductors
Product specication
Quadruple ESD transient voltage suppressor
BZA900A-series
FEATURES
ESD rating >8 kV, according to IEC61000-4-2
SOT665 surface mount package
Common anode configuration.
APPLICATIONS
Computers and peripherals
Audio and video equipment
Communication systems
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead
SOT665 package for 4-bit wide ESD transient
suppression.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BZA956A
Z1
BZA962A
Z2
BZA968A
Z3
PIN
DESCRIPTION
1
cathode 1
2
common anode
3
cathode 2
4
cathode 3
5
cathode 4
handbook, halfpage
MGW315
1
5
4
3
2
12
3
4
5
Fig.1 Simplified outline (SOT665) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. DC working current limited by Ptot(max).
2. Device mounted on standard printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
IZ
working current
Tamb =25 °C
note 1
mA
IF
continuous forward current
Tamb =25 °C
200
mA
IFSM
non-repetitive peak forward current tp = 1 ms; square pulse
4A
Ptot
total power dissipation
Tamb =25 °C; note 2; see Fig.5
335
mW
PZSM
non repetitive peak reverse power
dissipation:
square pulse; tp = 1 ms; see Fig.3
BZA956A
16
W
BZA962A
15
W
BZA968A
14
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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