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參數(shù)資料
| 型號(hào)： | 8TWS08S |
| 英文描述： | THYRISTOR 12A SMD |
| 中文描述： | 晶閘管12A條貼片 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 88K |
| 代理商： | 8TWS08S |
3
8TWS..S
Preliminary Data Sheet I2132 rev. C 10/99
IR
Series
Thermal-Mechanical Specifications
T
J
Max. Junction Temperature Range - 40 to 125
°C
T
stg
Max. Storage Temperature Range
- 40 to 125
Soldering Temperature
240
°C
for 10 seconds (1.6mm from case)
R
thJC
Max. Thermal Resistance Junction
2.0
°C/W
DC operation
to Case
R
thJA
Max. Thermal Resistance Junction
65
°C/W
to Ambient (PCB Mount)**
wt
Approximate Weight
1(0.03)
g (oz.)
T
Case Style
TO-252AA (D-PAK)
Parameters
8TWS..S
Units
Conditions
Triggering
P
GM
Max. peak Gate Power
8.0
W
P
G(AV)
Max. average Gate Power
2.0
+ I
GM
Max. paek positive Gate Current
1.5
A
- V
GM
Max. paek negative Gate Voltage
10
V
I
GT
Max. required DC Gate Current
20
mA
Anode supply = 6V, resistive load, T
J
= - 10°C
to trigger
15
Anode supply = 6V, resistive load, T
J
= 25°C
10
Anode supply = 6V, resistive load, T
J
= 125°C
V
GT
Max. required DC Gate Voltage
1.2
V
Anode supply = 6V, resistive load, T
J
= - 10°C
to trigger
1
Anode supply = 6V, resistive load, T
J
= 25°C
0.75
Anode supply = 6V, resistive load, T
J
= 125°C
V
GD
Max. DC Gate Voltage not to trigger
0.20
T
J
= 125°C, V
DRM
= rated value
I
GD
Max. DC Gate Current not to trigger
0.10
mA
T
J
= 125°C, V
DRM
= rated value
Parameters
8TWS..S
Units
Conditions
Switching
Parameters
8TWS..S
Units
Conditions
t
gt
t
rr
t
q
Typical turn-on time
0.8
μs
T
J
= 25°C
Typical reverse recovery time
3
T
J
= 125°C
Typical turn-off time
100
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140μm) copper 40°C/W
For recommended ootprint and soldering echniques refer o application note #AN-994
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