參數(shù)資料
型號： 73M1916-IM/F
廠商： Maxim Integrated Products
文件頁數(shù)： 25/88頁
文件大?。?/td> 0K
描述： MICRODAA SET FXO OF VOIP 32-QFN
產(chǎn)品培訓(xùn)模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝： 490
系列： MicroDAA™
功能： 數(shù)據(jù)存取裝置（DAA）
接口： PCM，SPI
電路數(shù)： 1
電源電壓： 3 V ~ 3.6 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 32-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝： 32-QFN 裸露焊盤（5x5）
包裝： 散裝
包括： *
DS_1x66B_001
73M1866B/73M1966B Data Sheet
Rev. 1.6
31
4.3
Over-Voltage and EMI Protection
Over-voltage protection is required to meet worst-case conditions for target countries. UL1950,
EN60950, IEC 60950, ITU-T K.20/K.21 and GR-1089-CORE specifications define the protection
requirements for many countries. A single design can be implemented to meet all these requirements.
Figure 14 shows a recommended protection circuit topology. Fuse (F1) should be rated appropriately for
the country of operation, and the bidirectional thyristor (E1) should have a minimum break-over of 220 V,
a maximum break-over of 275 V and be able to survive a 100 A fast transient. In addition to over-voltage
and current protection, the 73M1x66B should make provisions to prevent EMI emissions and EMC
susceptibility. Figure 14 also illustrates how L1, L2, C35, C36 and C41can provide this suppression. The
ferrite beads, L1 and L2,
should be capable of passing 150 mA and have an impedance of 2K Ω at 100
MHz. C35, C36 and C41 should be between 47pF and 220nF, and rated for a breakdown voltage greater
than the highest isolation voltage or line voltage that is required for country compatibility. C35 and C36
should be returned to an earth ground. EMI suppression is highly dependent on the physical design of
the overall circuit and not all the suppression components may be needed in every design and
application.
C35
220pF, 3kV
C36
220pF, 3kV
L1
2K Ohm @ 100MHz
F1
TR600-150
L2
2K Ohm @ 100MHz
J1
RJ-11
1
2
3
4
5
6
E1
P3100SBRP
or equiv .
T
R
C41
220pF, 300V
Figure 14: Suggested Over-Voltage Protection and EMI Suppression Circuit
Table 28: Reference Bill of Materials for Figure 14
Reference
Part Description
Source
Example MFR P/N
E1
Bidirectional Thyristor
Diodes Inc., Bourns
TB3100H-13-H,
TISP4290T3BJR-S
F1
PPTC Fuse
Tyco, Bourns
MF-R015/600 or equiv.
L1,L2
2 KΩ @ 100 MHz, 150 mA min, 0805
Steward, TDK
MPZ2012S601A
C35, C36
220 pF, 3000 V
TDK
C4532COG3F221K
C41
220 pF, 300 V
Vishay
VJ1206Y221KXEAT5Z
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
73M1916-IMR/F 功能描述:電信線路管理 IC DAA-FXO VOLP System Line Side RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
73M1916-IVT/F 功能描述:電信線路管理 IC DAA-FXO VOLP System Line Side RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
73M1916-IVTR/F 功能描述:電信線路管理 IC DAA-FXO VOLP System Line Side RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
73M1922-DB 功能描述:網(wǎng)絡(luò)開發(fā)工具 73M1922 Demo Brd RoHS:否 制造商:Rabbit Semiconductor 產(chǎn)品:Development Kits 類型:Ethernet to Wi-Fi Bridges 工具用于評估:RCM6600W 數(shù)據(jù)速率:20 Mbps, 40 Mbps 接口類型:802.11 b/g, Ethernet 工作電源電壓:3.3 V
73M1966B-DB 功能描述:網(wǎng)絡(luò)開發(fā)工具 73M1966B Demo Brd RoHS:否 制造商:Rabbit Semiconductor 產(chǎn)品:Development Kits 類型:Ethernet to Wi-Fi Bridges 工具用于評估:RCM6600W 數(shù)據(jù)速率:20 Mbps, 40 Mbps 接口類型:802.11 b/g, Ethernet 工作電源電壓:3.3 V
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