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參數資料
| 型號： | PH955L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 62.5 A, 55 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁數： | 6/12頁 |
| 文件大?。?/td> | 87K |
| 代理商： | PH955L |
9397 750 14557
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2005
6 of 12
Philips Semiconductors
PH955L
N-channel TrenchMOS logic level FET
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values
T
j
= 25
°
C
Drain-source on-state resistance as a function
of drain current; typical values
Fig 5.
Fig 6.
T
j
= 25
°
C and 150
°
C; V
DS
> I
D
×
R
DSon
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaa779
0
10
20
30
40
I
D
(A)
0
0.5
1
1.5
2
V
DS
(V)
2.5
3
2.1
5
10
2.3
V
GS
(V) = 2.2
2
003aaa782
0
4
8
12
16
20
0
10
20
30
40
I
D
(A)
R
DSon
(m
)
3
10
2.3
V
GS
(V) = 2.5
2.1
2.2
2
4.5
003aaa780
0
10
20
30
40
0
1
2
3
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C
03aa28
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
T
j
(
°
C)
a
a
R
DSon 25 C
)
----------------------------
=
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PH955L T/R | 功能描述:MOSFET TRENCH-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH955L,115 | 功能描述:MOSFET TRENCH-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH965C6 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SPECIFICATION |
| PH965C6SC | 制造商:Fuji Electric 功能描述: |
| PH9676C6 | 制造商:Fuji Electric 功能描述:Diode, Si, VF=5V, IO=10A, VRRM=600V, trr=30 ns, TO-247 |
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