參數(shù)資料
型號(hào): BT168GWF
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: SCR, fast, logic level
中文描述: 1 A, 600 V, SCR
封裝: PLASTIC, SC-73, 4 PIN
文件頁(yè)數(shù): 2/14頁(yè)
文件大?。?/td> 192K
代理商: BT168GWF
BT168GWF
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 December 2010
2 of 14
NXP Semiconductors
BT168GWF
SCR, fast, logic level
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2.
Pin
1
2
3
4
Pinning information
Symbol
Description
K
cathode
A
anode
G
gate
A
anode
Simplified outline
Graphic symbol
SOT223 (SC-73)
1
3
2
4
sym037
A
K
G
Table 3.
Type number
Ordering information
Package
Name
SC-73
Description
plastic surface-mounted package with increased heatsink;
4 leads
Version
SOT223
BT168GWF
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
Conditions
Min
-
-
-
-
Max
600
600
0.63
1
Unit
V
V
A
A
half sine wave; T
sp
112 °C; see
Figure 3
half sine wave; T
sp
112 °C; see
Figure 1
;
see
Figure 2
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
see
Figure 4
; see
Figure 5
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
t
p
= 10 ms; sine-wave pulse
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/μs
I
TSM
non-repetitive peak on-state
current
-
8
A
-
-
-
-
-
-
-
-40
-
9
0.32
50
1
5
2
0.1
150
125
A
A
2
s
A/μs
A
V
W
W
°C
°C
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I2t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
相關(guān)PDF資料
PDF描述
BT168GW Logic level thyristor
BT169B SCR
BT169D SCR
BT169G SCR
BT169D-L SCR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BT168GWF,115 功能描述:SCR 600V 1A SOT223 RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT168SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications
BT168W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications
BT168WSERIES 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications
BT169 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristor logic level