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參數(shù)資料
| 型號(hào)： | 2SK3510-Z-AZ |
| 元件分類： | JFETs |
| 英文描述： | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-25Z, TO-220SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | 2SK3510-Z-AZ |
Data Sheet D15687EJ1V0DS
2
2SK3510
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 42 A
30
60
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 42 A
6.5
8.5
m
Input Capacitance
Ciss
VDS = 10 V
8500
pF
Output Capacitance
Coss
VGS = 0 V
1300
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
650
pF
Turn-on Delay Time
td(on)
VDD = 38 V, ID = 42 A
35
ns
Rise Time
tr
VGS = 10 V
28
ns
Turn-off Delay Time
td(off)
RG = 0
105
ns
Fall Time
tf
16
ns
Total Gate Charge
QG
VDD = 60 V
150
nC
Gate to Source Charge
QGS
VGS = 10 V
30
nC
Gate to Drain Charge
QGD
ID = 83 A
52
nC
Body Diode Forward Voltage
VF(S-D)
IF = 83 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V
80
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
240
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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| 2SK3510 | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3510-ZJ-AZ | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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| 2SK3510-AZ | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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