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參數(shù)資料
| 型號(hào)： | 2SK3484-Z-AZ |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封裝： | TO-252, MP-3Z, 3 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 144K |
| 代理商： | 2SK3484-Z-AZ |
Data Sheet D15069EJ2V0DS
5
2SK3484
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tf
tr
td(on)
td(off)
VDD = 50 V
VGS = 10 V
RG = 0
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
10
0.01
0.1
100
1000
10000
1
10
100
Ciss
VGS = 0 V
f = 1 MHz
Coss
Crss
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
50
0
50
100
150
300
200
100
0
10 V
VGS = 4.5 V
ID = 8 A
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.01
0.1
1
10
100
0 V
VGS = 10 V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Drain
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
510
15
20
25
100
80
60
40
20
0
VDS
VGS
VDD = 80 V
50 V
20 V
ID = 16 A
10
8
6
4
2
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3484-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3485 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3485-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 2.5A SOT89 |
| 2SK3486 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3486-TD-E | 制造商:SANYO 功能描述:Nch 20V 8A 43m@4V PCP(SC62) Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 8A TO243 |
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