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參數(shù)資料
| 型號： | 2SK3212 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SK3212 |
2SK3212
6
0.1
0.3
1
3
10
30
100
010
20
30
40
50
2000
5000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
8
1624
3240
0
1000
500
50
100
20
10
200
500
300
30
100
3
10
1
0.1
0.3
1
3
10
30 100
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
10
20
50
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
I
= 5 A
D
VGS
VDS
V
= 100 V
50 V
25 V
DD
V
= 100 V
50 V
25 V
DD
t f
r
t
d(on)
t
d(off)
t
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
V
= 10 V, V
= 30 V
PW = 5 s, duty < 1 %
GS
DD
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| 2SJ479S | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3212-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3214 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3215 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK321601 | 制造商:FUJI 功能描述:New |
| 2SK3216-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
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