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參數(shù)資料
| 型號(hào)： | 2SK3116-ZJ |
| 元件分類： | JFETs |
| 英文描述： | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2SK3116-ZJ |
Data Sheet D13339EJ2V0DS
2
2SK3116
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHRACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 3.75 A
2.0
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 3.75 A
0.9
1.2
Input Capacitance
Ciss
VDS = 10 V
1100
pF
Output Capacitance
Coss
VGS = 0 V
200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
20
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 3.75 A
18
ns
Rise Time
tr
VGS = 10 V
15
ns
Turn-off Delay Time
td(off)
RG = 10
50
ns
Fall Time
tf
RL = 50
15
ns
Total Gate Charge
QG
VDD = 450 V
26
nC
Gate to Source Charge
QGS
VGS = 10 V
6
nC
Gate to Drain Charge
QGD
ID = 7.5 A
10
nC
Body Diode Forward Voltage
VF(S-D)
IF = 7.5 A, VGS = 0 V
1.0
V
Reverse Recovery Time
Trr
IF = 7.5 A, VGS = 0 V
1.6
s
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
7.6
C
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
RG = 10
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10%
0
90%
VGS
ID
ton
toff
td(on)
tr
td(off)
tf
10%
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