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參數(shù)資料
| 型號： | 2SK215 |
| 元件分類： | JFETs |
| 英文描述： | POWER, FET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SK215 |
2SK213, 2SK214, 2SK215, 2SK216
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK213
V
DSX
140
V
2SK214
160
2SK215
180
2SK216
200
Gate to source voltage
V
GSS
±15
V
Drain current
I
D
500
mA
Body to drain diode reverse drain current
I
DR
500
mA
Channel dissipation
Pch
1.75
W
Pch*
1
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C =
25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
2SK213
V
(BR)DSX
140
—
V
I
D = 1 mA, VGS = –2 V
breakdown voltage
2SK214
160
—
V
2SK215
180
—
V
2SK216
200
—
V
Gate to source breakdown
voltag
V
(BR)GSS
±15
—
V
I
G = ±10 A, VDS = 0
Gate to source voltage
V
GS(on)
0.2
—
1.5
V
I
D = 10 mA, VDS = 10 V *
1
Drain to source saturation
voltage
V
DS(sat)
—
2.0
V
I
D = 10 mA, VGD = 0 *
1
Forward transfer admittance
|y
fs|
2040—
mS
I
D = 10 mA, VDS = 20 V *
1
Input capacitance
Ciss
—
90
—
pF
I
D = 10 mA, VDS = 10 V,
Reverse transfer capacitance
Crss
—
2.2
—
pF
f = 1 MHz
Note:
1. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK214 | POWER, FET, TO-220AB |
| 2SK2161 | 9 A, 200 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 2SK2167 | 0.4 A, 250 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK216 | 0.5 A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK214 | 0.5 A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK215(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2150 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2151 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2152 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SK2153 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 4A I(D) | TO-251 |
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