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參數(shù)資料
| 型號： | 2SJ546 |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 12/12頁 |
| 文件大小： | 67K |
| 代理商： | 2SJ546 |
2SJ546
7
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50
Vin
–15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
20
16
12
8
4
25
50
75
100
125
150
0
–20
–16
–12
–8
–4
0
–0.4
–0.8
–1.2
–1.6
–2.0
V
= 0, 5 V
GS
–10 V
–5 V
Pulse Test
I
= –15 A
V
= –25 V
duty < 0.1 %
Rg > 50
AP
DD
Repetitive
Avalanche
Energy
E
(mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit
Avalanche Waveform
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
Source to Drain Voltage
V
(V)
SD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ552L | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ552S | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553S-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553L | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2N2891SMD | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ546(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ546-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ547 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ547-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ548 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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