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參數(shù)資料
| 型號： | 2SJ479S |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SJ479S |
2SJ479(L), 2SJ479(S)
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain
current
I
DSS
—
–10
AV
DS = –30 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state R
DS(on)
—
2535m
I
D = –15A, VGS = –10V
Note3
resistance
R
DS(on)
—
4060m
I
D = –15A, VGS = –4V
Note3
Forward transfer admittance
|y
fs|
1220—
S
I
D = –15A, VDS = –10V
Note3
Input capacitance
Ciss
—
1700
—
pF
V
DS = –10V
Output capacitance
Coss
—
950
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
260
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
20
—
ns
V
GS = –10V, ID = –15A
Rise time
t
r
—
290
—
ns
R
L = 0.67
Turn-off delay time
t
d(off)
—
170
—
ns
Fall time
t
f
—
130
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.1
—
V
I
F = –30A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
70
—
ns
I
F = –30A, VGS = 0
diF/ dt = 50A/
s
Note:
3. Pulse test
See characteristic curves of 2SJ471
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PDF描述 |
|---|---|
| 2SJ506S | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ656 | 18 A, 100 V, 0.104 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ546 | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ552L | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ552S | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ479STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ48 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SJ480 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 300MA I(D) | TO-236AB |
| 2SJ483 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ483TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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