參數(shù)資料
型號(hào): 05F8025
英文描述: IC-SM-QUAD 12 BIT DAC
中文描述: 集成電路釤四路12位DAC
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 502K
代理商: 05F8025
DAC8412/DAC8413
REV. C
–4–
WAFER TEST LIMITS
DAC8412GBC
DAC8413GBC
Parameter
Symbol
Conditions
Limit
Units
Integral Nonlinearity
INL
+1
LSB max
Differential Nonlinearity
DNL
+1
LSB max
Min Scale Offset
VZSE
+1
LSB max
Full-Scale Offset
VFSE
+1
LSB max
Logic Input High Voltage
VINH
2.4
V min
Logic Input Low Voltage
VINL
0.8
V max
Logic Input Current
IIN
1
A max
Logic Output High Voltage
VOH
IOH = +0.4 mA
2.4
V min
Logic Output Low Voltage
VOL
IOL = –1.6 mA
0.4
V max
Positive Supply Current
IDD
VREFH = +2.5 V
12
mA max
Negative Supply Current
ISS
–10
mA min
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
(T
A = +25°C unless otherwise noted)
VSS to VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +33.0 V
VSS to VLOGIC . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +33.0 V
VLOGIC to DGND . . . . . . . . . . . . . . . . . . . . . –0.3 V, +18.0 V
VSS to VREFL . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +VSS–2.0 V
VREFH to VDD . . . . . . . . . . . . . . . . . . . . . . . . . +2.0 V, +33.0 V
VREFH to VREFL . . . . . . . . . . . . . . . . . . . . . . . . +2.0 V, VSS–VDD
Current into Any Pin 4 . . . . . . . . . . . . . . . . . . . . . . .
±15 mA
Digital Input Voltage to DGND . . . . . –0.3 V, VLOGIC +0.3 V
Digital Output Voltage to DGND . . . . . . . . . . –0.3 V, +7.0 V
Operating Temperature Range
ET, FT, EP, FP, FPC . . . . . . . . . . . . . . . . –40
°C to +85°C
AT, BT, BTC . . . . . . . . . . . . . . . . . . . . . –55
°C to +125°C
Dice Junction Temperature . . . . . . . . . . . . . . . . . . . . . +150
°C
Storage Temperature . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Power Dissipation Package . . . . . . . . . . . . . . . . . . . 1000 mW
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300
°C
Thermal Resistance
Package Type
θ
JA*
θ
JC
Units
28-Pin Hermetic DIP (T)
50
7
°C/W
28-Pin Plastic DIP (P)
48
22
°C/W
28-Lead Hermetic Leadless Chip Carrier (TC) 70
28
°C/W
28-Lead Plastic Leaded Chip Carrier (PC)
63
25
°C/W
NOTE
*
θ
JA is specified for worst case mounting conditions, i. e.,
θ
JA is specified for device
in socket.
DICE CHARACTERISTICS
CAUTION
1. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation at or above this specification is not
implied. Exposure to the above maximum rating conditions for extended periods may affect
device reliability.
2. Digital inputs andoutputs are protected, however, permanent damage may occur on unprotected units
from high-energy electrostatic fields. Keep units in conductive foam or packaging at all times until
ready to use. Use proper antistatic handling procedures.
3. Remove power before inserting or removing units from their sockets.
4. Analog outputs are protected from short circuit to ground or either supply.
WARNING!
ESD SENSITIVE DEVICE
(@ VDD = +15.0 V, VSS = –15.0 V, VLOGIC = +5.0 V, VREFH = +10.0 V, VREFL = –10.0 V, TA = +25 C unless
otherwise noted.)
相關(guān)PDF資料
PDF描述
05F8031 IC-SM-QUAD 12 BIT DAC
934051200112 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
934051230112 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
934051510185 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
934031080215 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
05FD101J03 制造商: 功能描述: 制造商:undefined 功能描述:
05FD111J03 制造商: 功能描述: 制造商:undefined 功能描述:
05FD161J03 制造商: 功能描述: 制造商:undefined 功能描述:
05FD241J03 制造商: 功能描述: 制造商:undefined 功能描述:
05FD271J03 制造商: 功能描述: 制造商:undefined 功能描述: